The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (000 (1) over tilde) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of -2 and +2 V. Concurrently, the surface roughness increases from 1.0 +/- 0.5 up to 2.0 +/- 0.5 nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200 degrees C for 30 min. However, the contacts both before and after the annealing exhibited ideality factors of at least similar to 1.8 at +0.5 V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at similar to 0.32 eV below the conduction band edge.
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