Effect of tensile and compressive strains on the transport properties of SmNiO3 layers epitaxially grown on (001) SrTiO3 and LaAlO3 substrates

This paper deals with the role of epitaxial strain on the structure and electronic transport properties of metastable SmNiO3 layers grown by metal-organic chemical vapor deposition onto SrTiO3 and LaAlO3 substrates. The characterization of these layers is carried out by high resolution x-ray diffraction and four-probe resistivity measurements. It is found that the SmNiO3 phase is stabilized by in-plane compressive strain whereas in-plane tensile strain induces the creation of oxygen vacancies that induces an annihilation of the metal-insulator transition and a huge increase of the resistivity.