期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 40, 期 21, 页码 6803-6808出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/40/21/047
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Conditions defining melting fluence thresholds for silicon under pulsed laser irradiation are introduced in this paper. The melting conditions include both thermal and non-thermal contributions. Furthermore, a definition of the non-thermal melting threshold is given as the laser fluence above which the non-thermal contribution dominates over the thermal one and a short-lived non-thermal liquid phase appears in the femtosecond time scale. Numerical values of thresholds obtained through a two-temperature model are in good agreement with experimental data. The dependence of fluence thresholds on both wavelength and pulse width is explored and discussed in detail.
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