Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures

We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnO/ZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. (c) 2007 American Institute of Physics.