期刊
APPLIED PHYSICS LETTERS
卷 91, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2815658
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资金
- National Research Foundation of Korea [R11-1999-065-01001-0, 과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Epitaxial NiO films have been fabricated on SrRuO3 films prepared on SrTiO3 single-crystal substrates. The x-ray diffraction spectra and transmission electron microscopy confirm the epitaxial growth of NiO with atomically flat surfaces on the SRO electrode. The I-V measurements of epitaxial NiO show the resistive memory switching behavior with a change in the polarity of the voltage bias, in contrast with the switching behavior of polycrystalline NiO by a single polarity. The I-V characteristics of epitaxial NiO prepared under various synthesis conditions and electrodes are presented, which suggests an important role of interfaces between NiO and electrodes on the resistive switching behavior. (c) 2007 American Institute of Physics.
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