期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 40, 期 22, 页码 R387-R412出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/40/22/R01
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ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.
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