期刊
ELECTRONICS LETTERS
卷 43, 期 24, 页码 1382-1384出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20072579
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The design, fabrication and characterisation of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector are reported. The photodetector can separate UV-A and UV-B band radiation by bias switching a two-terminal n-p-n homejunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A (315-400 nm) and reject UV-B (280-315 nm) band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.
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