High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application

We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2/TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5 ns voltage pulses. In addition, data retention of more than 256 h at 85 degrees C and an excellent endurance of over 2x10(6) cycles have been confirmed. These results indicate that Pt/TiO2/TiN devices have a potential for nonvolatile multiple-valued memory devices. (C) 2007 American Institute of Physics.