期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 36, 期 12, 页码 1621-1624出版社
SPRINGER
DOI: 10.1007/s11664-007-0202-9
关键词
GaN, Fe; semi-insulating; high electron mobility transistor (HEMT); deep acceptor; electron capture cross section; metal-organic vapor phase epitaxy (MOVPE)
Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据