期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 40, 期 2, 页码 228-232出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2007.06.020
关键词
graphene; FET; semiconducting; edge states
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. (c) 2007 Elsevier B.V. All rights reserved.
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