Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing

Heavy-ion testing of a Radiation-Hardened-By-Design (RHBD) 90 nm Dual Interlocked Cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this directional effect is due to charge sharing and parasitic bipolar effects due to n-well potential collapse.