Multiwavelength Raman spectroscopy of diamond nanowires present in n-type ultrananocrystalline films

Multiwavelength Raman spectroscopy is employed to investigate ultrananocrystalline diamond films deposited by the plasma enhanced chemical vapor deposition technique. Recently, we have shown that the addition of nitrogen in the gas source during synthesis induce the formation of diamond n-type films, exhibiting the highest electrical conductivity at ambient temperature. This point is related with the formation of elongated diamond nanostructures and the presence of sp(2)-bonded carbon in these films. The Raman results presented here confirm these aspects and provide a better and deeper understanding of the nature of these films and their related optical and electronic properties.