Graphene transistors fabricated via transfer-printing in device active-areas on large wafer

We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm(2)/V-s, respectively, and a maximum drive-current of 1.7 mA/mu m (at V-DS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.