期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 17, 期 12, 页码 879-881出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2007.910506
关键词
Schottky diode mixers; submillimeter wave diodes; submillimeter wave mixers
We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.
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