Electrical stability of pentacene thin film transistors

The influence of environmental conditions on the device operation and the stability of polycrystalline pentacene thin film transistors (TFTs) were investigated. Electrical in-situ and ex-situ measurements of staggered pentacene TFTs were carried out to study the influence of dry oxygen and moisture on the device stability. The transistors were fabricated by organic molecular beam deposition on thermal oxide dielectrics. Oxygen exposure of the pentacene films lead to the creation of acceptor-like states in the bandgap. The acceptor-like states cause a shift of the onset of the drain current towards positive gate voltages. The charge carrier mobility and the on/off ratio of the transistor are not affected by the acceptor-like states. Furthermore, the acceptor-like states have an influence on the stability of the TFTs. Devices exposed to oxygen exhibit a shift of the threshold voltage upon prolonged biasing. Transistors characterized under vacuum conditions (no oxygen exposure) do not exhibit a shift of the threshold voltage (bias stress effect) as a consequence of prolonged biasing. The experimental results show a clear correlation between the device behavior upon oxygen exposure and the stability of the devices. The shift of the onset voltage upon oxygen exposure correlates with the shift of the threshold voltage upon prolonged bias. The influence of dry oxygen on the onset voltage, the threshold voltage, and the electrical stability will be described. Furthermore, the influence of bias stress on the operation of organic circuits like an active matrix addressed OLED displays will be discussed. (c) 2007 Elsevier B.V. All rights reserved.