期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 10, 期 6, 页码 270-275出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2008.03.004
关键词
molecular dynamics simulation; atomic force microscopy; silicon; dislocation; pin tool
By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are simulated. Two partial edge dislocations are introduced into workpiece Si, it is found that the motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocations is far below the yield strength of Si. (c) 2008 Elsevier Ltd. All rights reserved.
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