Low temperature preparation of bismuth-related ferroelectrics powder and thin films by hydrothermal synthesis

Bi4Ti3O12 (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiOx/SiO2/Si. Bi4Ti3O12 or TiO2 gel solution was formed and annealed at 350 degrees C. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO2 anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.