期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 54, 期 12, 页码 3393-3399出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.908601
关键词
conductivity modulation; GaN; high breakdown voltage; high power switching device; hole injection; low specific ON-state resistance; normally off; Si substrate
We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (R-ON . A) and the OFF-state breakdown voltage (BVds) are 2.6 m Omega . cm(2) and 800 V, respectively. The developed GIT is advantageous for power switching applications.
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