Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation

We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (R-ON . A) and the OFF-state breakdown voltage (BVds) are 2.6 m Omega . cm(2) and 800 V, respectively. The developed GIT is advantageous for power switching applications.