期刊
APPLIED PHYSICS LETTERS
卷 91, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2820605
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资金
- Austrian Science Fund (FWF) [F 2507, F 2502] Funding Source: researchfish
Stranski-Krastanow island growth is demonstrated for tensile strained silicon epilayers on Ge (001) substrates over a wide range of growth temperatures. Small, Si-rich islands show sidewall faces near {1,1,10}, whereas larger islands are {113}-terminated truncated pyramids with an aspect ratio near 0.1. In contrast to compressively strained Ge on Si, we find for Si on Ge a significantly thicker wetting layer of > 8 ML and coexistence of islands and dislocations. (c) 2007 American Institute of Physics.
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