Multidimensional ZnO light-emitting diode structures grown by metal organic chemical vapor deposition on p-Si

A multidimensional ZnO light-emitting diode (LED) structure comprising film/nanorods/substrate was fabricated on a p-type Si substrate using metal organic chemical vapor deposition at relatively low growth temperature. The filmlike top layer used for the metal contact was continuously formed on the ZnO nanorods by varying the growth conditions and the resulting structure allowed us to utilize the nanorods with intense emission as an active layer. We investigated the performance of the resulting multidimensional LED. An extremely high breakdown voltage and low reverse leakage current as well as typical rectification behavior were observed in the I-V characteristics.