Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

An original approach of monolithic integration of InP based heterostructures on silicon is proposed based on the peculiar properties of the heterointerface between InP and crystalline Gd(2)O(3). When grown on a crystalline Gd(2)O(3)/Si(111) buffer, InP takes its bulk lattice parameter as soon as the growth begins, and the lattice mismatch (7.9%) is fully accommodated by the formation of a misfit dislocation network at the InP/Gd(2)O(3) heterointerface. This plastic compliant effect allows the monolithic growth of good quality InAsP/InP heterostructures on Si, as attested by room-temperature photoluminescence experiments. (c) 2007 American Institute of Physics.