The electronic structure and density of states of SnO2, CuAlO2, and CuInO2 have been calculated using the plane wave pseudopotential method, in order to study the limits to doping in n, p, and bipolar semiconductor systems. For each material, we have calculated the charge neutrality level and we have related it to the system's electronic structure. We have found that the charge neutrality level energy increases in the band gap, going from p-type to n-type materials, giving an insight into the type of doping achievable in these oxides. (c) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据