A theoretical model is developed for electron velocity saturation in high power GaN transistors. It is shown that electron velocity at high electric fields is reduced due to heating of electron gas since the high density of nonequilibrium LO phonons cannot efficiently transfer heat to the lattice. However, the resulting degradation of electron velocity is found to be weaker than previously reported. The results are compared with experimental data, and the ways to improve the efficiency of cooling the electron gas to increase the drift velocity are discussed. (c) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据