We show via density functional calculations that the electronic band structures of < 112 >-oriented hydrogenated silicon nanowires (SiNWs) could be significantly altered by axial stresses. In particular, an axial compression could cause an indirect-to-direct band gap transition in < 112 > SiNWs. As direct energy band may induce strong light-emission properties of Si, the possibility of indirect-to-direct band transition via axial stress has fundamental implications in exploiting SiNWs for optoelectronic applications. (c) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据