4.5 Article

First-principles studies of metal (111)/ZnO{0001} interfaces

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 37, 期 5, 页码 743-748

出版社

SPRINGER
DOI: 10.1007/s11664-007-0295-1

关键词

ZnO; first principles; metal; ZnO interface; Schottky barrier height

资金

  1. Direct For Mathematical & Physical Scien
  2. Division Of Materials Research [0803276] Funding Source: National Science Foundation

向作者/读者索取更多资源

The atomic and electronic structures for various metal (111)/ZnO{111} interfaces were studied by first-principles calculations based on density functional theory. The Schottky barrier heights (SBHs) were evaluated for Al, Ag, and Au/ZnO interfaces. SBHs at metal/ZnO polar interfaces were found to be very sensitive to the specific interface chemical bonding. Interface metal-zinc bonding tends to give Ohmic contacts, while the contribution of metal-oxygen bonds depends on the specific metal: simple metals gives Ohmic contacts whereas noble metals gives Schottky-like behavior. We discussed the implications of these results for controlling the formation of metal/ZnO contacts.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据