期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 46, 页码 25709-25715出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b06897
关键词
Schottky barrier; 2D; MoS2; DFT; metal contact; transition metal dichalcogenide
资金
- EPSRC [EP/J011592]
- Engineering and Physical Sciences Research Council [EP/J011592/1] Funding Source: researchfish
- EPSRC [EP/J011592/1] Funding Source: UKRI
The transition metal dichalcogenides (TMDs) are two-dimensional layered solids with van der Waals bonding between layers. We calculate their Schottky barrier heights (SBHs) using supercell models and density functional theory. It is found that the SBHs without defects are quite strongly pinned, with a pinning factor S of about S = 0.3, a similar value for both top and edge contact geometries. This arises because there is direct bonding between the contact metal atoms and the TMD chalcogen atoms, for both top and edge contact geometries, despite the weak interlayer bonding in the isolated materials. The Schottky barriers largely follow the metal induced gap state (MIGS) model, like those of three-dimensional semiconductors, despite the bonding in the TMDs being largely constrained within the layers. The pinning energies are found to be lower in the gap for edge contact geometries than for top contact geometries, which might be used to obtain p-type contacts on MoS2.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据