期刊
SOLID STATE COMMUNICATIONS
卷 147, 期 9-10, 页码 401-404出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2008.06.011
关键词
semiconductors; amorphous silicon film; metal induced crystallization
EXAFS investigation about Metal Induced Crystallization (MIC) of a-Si thin films doped with Ni, has been carried Out at the K edge of Ni. Several a-Si films deposited on quartz and annealed at different temperatures and a non-annealed sample have been analyzed in Order to study the variation of the nickel Surroundings as a function of temperature. Nickel particles were co-sputtered together with silicon to obtain a metal percentage of about at. 0.5%. In all the annealed samples it was found that nickel, in its first shell, is 8-fold coordinated to silicon while a weak signal Corresponding to the second shell appears in the Fourier transform of the spectra as in crystalline nickel di-silicide (c-NiSi2) used as reference compound. No presence of Ni Clustering has been ascertained. In the non-annealed sample, where the NiSi2 formation has never been observed, EXAFS shows a deformed first shell environment on Ni similar to that of NiSi2. (c) 2008 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据