期刊
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
卷 40, 期 5, 页码 662-669出版社
WILEY
DOI: 10.1002/er.3446
关键词
Cu2ZnSnS4; thin film solar cell; sol-gel process; single-coating; 2-methoxyethanol
资金
- Korea Institute of Energy Research (KIER) [B5-2419]
- International Collaborative Energy Technology R&D Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry & Energy, Republic of Korea [20138520011120]
- Center for Advanced Meta-Materials (CAMM) - Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM) [2014M3A6B3063703]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20138520011120] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [KIER2-1] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20151113064, 2014M3A6B3063703] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Carbon-free Cu2ZnSnS4 (CZTS) thin films were prepared via a simple spin-coating process based on a sol-gel precursor of methoxyethanol solution with metal salts and thiourea, followed by post-sulfurization. The sol-gel precursor solution was deposited onto molybdenum-coated glass substrates. The sulfurization process was carried out using a conventional furnace at 525 degrees C for 60min in a nitrogen atmosphere with sulfur powder. The structural, morphological and compositional properties of as-sulfurized thin films were characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Auger electron spectroscopy. Only a single coating of the precursor solution was applied to obtain uniform Zn-rich and Cu-poor CZTS films thicker than 1 mu m after post-annealing. The best solar cell fabricated with the as-prepared CZTS films of band gap energy 1.37eV showed a short-circuit current density of 10.15mA/cm(2), an open circuit voltage of 0.509V, a fill factor of 33.72% and a conversion efficiency of 1.74%. Copyright (c) 2015 John Wiley & Sons, Ltd.
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