期刊
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5
卷 6, 期 5, 页码 1030-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.200881211
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Evaporated CuInS2 films using a single-source were annealed in H2S atmosphere from 250 to 500 degrees C for 60 min. after the evaporation. Polycrystalline CuInS2 powder grown by a hot-press method was employed as a source material, Cu/In ratios of the source were 1.0, 1.2 and 1.5 All the films annelated above 350 degrees C were of CuInS2 single phase regardless of the Cu/In ratio of the source material. The films prepared from the source material of the Cu/In ratio of 1.5 became Cu-rich films, which had the Cu/In ratio of 1.37. Carrier connectrations, resistivities and mobilities of the films annelated above 350 degrees C prepared from the source material of the Cu/In ratio of 1.5 were approximately 1x10(21) cm-3, 0.1 Omega cm and 0.1 cm(2)/Vs, respectively, at room temperature. The activation energy of the films annelated at 400 degrees C was evaluated to be 6.5 meV. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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