期刊
ADVANCED MATERIALS
卷 30, 期 38, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201707017
关键词
electrostatic force; ferroelectric polarization screening; interfaces; oxide heterostructures
类别
资金
- National Natural Science Foundation of China [51232006, 51472218, 11474249, 61574123, 11374009, 11234011]
- National 973 Program of China [2015CB654901]
- National Young 1000 Talents Program of China
- Fundamental Research Funds for the Central Universities [2017FZA4008]
- 111 Project [B16042]
Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.
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