期刊
ADVANCED MATERIALS
卷 26, 期 11, 页码 1660-1680出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201304665
关键词
organic electronics; organic field-effect transistors; bias-stability; organic semiconductors; microstructure
类别
资金
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT and Future Planning, Korea [2011-0031628]
- National Research Foundation of Korea [2011-0031628, 2012M3A6A5055728] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors (OFETs) are reviewed. OFETs are operated under continuous gate and source/drain biases and these bias stresses degrade device performance. The principles underlying this bias instability are discussed, particularly the mechanisms of charge trapping. There are three main charge-trapping sites: the semiconductor, the dielectric, and the semiconductor-dielectric interface. The charge-trapping phenomena in these three regions are analyzed with special attention to the microstructural dependence of bias instability. Finally, possibilities for future research in this field are presented. This critical review aims to enhance our insight into bias-stress-induced charge trapping in OFETs with the aim of minimizing operational instability.
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