期刊
ADVANCED MATERIALS
卷 26, 期 27, 页码 4735-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201400918
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资金
- Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning as Global FrontierProject [2013M3A6A5073177, 2011-0031628]
- National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology, Korea [2009-0083540]
- National Research Foundation of Korea [2011-0031628, 2013M3A6A5073177] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles.
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