期刊
ADVANCED MATERIALS
卷 26, 期 20, 页码 3263-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201305845
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资金
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) [25107004]
- Experiment-Theory Fusion trial project by MANA
- Council for Science and Technology Policy (CSTP) of Japan
- Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN
We report ambipolar charge transport in a-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V-bg) and drain-source voltage (V-ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
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