Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

ADVANCED MATERIALS

卷 26, 期 38, 页码 6587-6593

WILEY-V C H VERLAG GMBH

two dimensional layer semiconductor; indium selenide; field-effect transistor; mobility; carrier scatter

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. National Natural Science Foundation of China (NSFC) [61172001, 21373068]
2. National key Basic Research Program of China (973 Program) [2013CB632900]