期刊
ADVANCED MATERIALS
卷 27, 期 5, 页码 917-921出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201404411
关键词
colloidal quantum dots; depleted heterojunctions; PbS; [6; 6]-phenyl-61-butyric acid methyl ester (PCBM); photovoltaics
类别
资金
- King Abdullah University of Science and Technology (KAUST) [KUS-11-009-21]
- Ontario Research Fund Research Excellence Program
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- UNIST - Ministry of Education, Korea via a National Research Foundation of Korea Grant
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korean Ministry of Knowledge Economy
The spatial location of the predominant source of performance-limiting recombination in today's best colloidal quantum dot (CQD) cells is identified, pinpointing the TiO2: CQD junction; then, a highly n-doped PCBM layer is introduced at the CQD: TiO2 heterointerface. An n-doped PCBM layer is essential to maintain the depletion region and allow for efficient current extraction, thereby producing a record 8.9% in overall power conversion efficiency.
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