期刊
ADVANCED MATERIALS
卷 26, 期 25, 页码 4376-4380出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201400557
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资金
- Office of Science, Office of Basic Energy Sciences, Materials Sciences Division of the US Department of Energy [DE-AC02-05CH11231]
- Australian Research Council [FT110100523, DP140100463, DP140102849]
- National Research Foundation of Korea - Korean Government [NRF-2013S1A2A2035418]
- RTG-DFG [1401]
- Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy [CNMS2010-280]
- U.S. Department of Energy [DE-FG02-07ER46416]
- NSF [DMR-0907191, DMR-0820404, DMR-0723032]
- U.S. Department of Energy (DOE) [DE-FG02-07ER46416] Funding Source: U.S. Department of Energy (DOE)
Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.
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