4.8 Article

Spatially Mapping Charge Carrier Density and Defects in Organic Electronics Using Modulation-Amplified Reflectance Spectroscopy

期刊

ADVANCED MATERIALS
卷 26, 期 26, 页码 4539-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201400859

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资金

  1. National Science Foundation [DMR Polymers 0906695]
  2. UMass Center for Hierarchical Manufacturing [CMMI-1025020]
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [0906695] Funding Source: National Science Foundation
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1064129] Funding Source: National Science Foundation

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Charge-modulated optical spectroscopy is used to achieve dynamic two-dimensional mapping of the charge-carrier distribution in poly(3-hexylthiophene) thin-film transistors. The resulting in-channel distributions evolve from uniformly symmetric to asymmetrically saturated as the devices are increasingly biased. Furthermore, physical, chemical, and electrical defects are spatially resolved in cases where their presence is not obvious from the device performance.

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