期刊
ADVANCED MATERIALS
卷 26, 期 25, 页码 4253-4259出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201305462
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- Samsung Advanced Instituted of Technology
- Air Force Office of Scientific Research [FA9550-12-1-0190]
- MSIP (Ministry of Science, ICT and Future Planning), Korea under the IT Consilience Creative Program [NIPA-2014-H0201-14-1001]
- Ministry of Public Safety & Security (MPSS), Republic of Korea [H0201-14-1001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Organic transistors with elastic conductors and dielectrics can be stretched up to 250% strain while maintaining the transistor characteristics. Strain-independent properties can be achieved after an initial programming cycle that causes the formation of microcracks in the semiconductor. The change in mobility with strain follows the same trend in different stretching directions.
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