期刊
ADVANCED MATERIALS
卷 26, 期 22, 页码 3649-3654出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201400127
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资金
- National 973 projects from the Ministry of Science and Technology [2012CB933003, 2013CB932601]
- NSF of China [51172273]
Getting a grip on the switching mechanism in nanoionic resistive memories: the bipolar electrochemical mechanism for mass transfer of Ag in nanoscale SiO2 is disclosed. The in-situ atomic-level experiments provide detailed evidence of the mass-transfer process under external electric fields. The mass transfer of Ag directly leads to conductive filament formation and disruption, which is responsible for the switching mechanism in nanoionic resistive memories.
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