期刊
ADVANCED MATERIALS
卷 25, 期 12, 页码 1774-1779出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203680
关键词
resistive switching; oxide RRAM; synaptic devices; neuromorphic computing; artificial visual systems
类别
资金
- Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI
- Focus Center Research Program (FCRP)
- 973 Program [2011CBA00602]
- Stanford School of Engineering China Research Exchange Program
- Stanford Graduate Fellowship
Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation. [GRAPHICS] .
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