4.8 Article

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

期刊

ADVANCED MATERIALS
卷 25, 期 12, 页码 1774-1779

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203680

关键词

resistive switching; oxide RRAM; synaptic devices; neuromorphic computing; artificial visual systems

资金

  1. Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI
  2. Focus Center Research Program (FCRP)
  3. 973 Program [2011CBA00602]
  4. Stanford School of Engineering China Research Exchange Program
  5. Stanford Graduate Fellowship

向作者/读者索取更多资源

Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation. [GRAPHICS] .

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