4.8 Article

Solution-Processible Highly Conducting Fullerenes

期刊

ADVANCED MATERIALS
卷 25, 期 17, 页码 2457-2461

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201204543

关键词

conducting fullerene; in-situ n-doping; fulleropyrrolidinium iodide; conductivity

资金

  1. National Science Foundation [DMR-0120967]
  2. Department of Energy [DE-FC3608GO18024/A000]
  3. Air Force Office of Scientific Research [FA9550-09-1-0426]
  4. Asian Office of Aerospace RD [FA2386-11-1-4072]
  5. Office of Naval Research [N00014-11-1-0300]
  6. Boeing Foundation
  7. US NSF CHE-CAREER [0844999]
  8. NSC of Taiwan [NSC100-2917-I-564-031]
  9. Direct For Mathematical & Physical Scien
  10. Division Of Chemistry [844999] Funding Source: National Science Foundation

向作者/读者索取更多资源

n-Doping of solution-processible organic semiconductors: highly conductive fullerenes are demonstrated through solution-processed fulleropyrrolidinium iodide (FPI) and FPI-doped PCBM to reach a high conductivity (3.2 S/m). The n-doping proceeds via anion-induced electron transfer between the iodide on FPI and the fullerene in the solid state.

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