4.8 Article

Flexoelectric Effect in the Reversal of Self-Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films

期刊

ADVANCED MATERIALS
卷 25, 期 39, 页码 5643-+

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201301601

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资金

  1. Institute for Basic Science (IBS) in Korea
  2. National Research Foundation of Korea (NRF) [2011-0005145, 2009-0077249, 2012R1A1A2008830]
  3. Korea government (MEST)
  4. National Research Foundation of Korea [2012R1A1A2008830, 2009-0077249] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

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