4.8 Article

The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating

期刊

ADVANCED MATERIALS
卷 25, 期 36, 页码 5098-5103

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201302511

关键词

vanadium dioxide nanowire; metal-to-insulator transition; memristor; non-volatile memory device; resistive switching device

资金

  1. Construction Technology Innovation Program (CTIP)
  2. Ministry of Land, Transport and Maritime Affairs (MLTM) of the Korean Government [12CCTI-B050622-05-000000]
  3. LG Yonam Culture Foundation, MANA
  4. World Premier International Research Center Initiative (WPI Initiative), MEXT, Japan, through a satellite laboratory at Georgia Tech

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