4.8 Article

N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

期刊

ADVANCED MATERIALS
卷 24, 期 46, 页码 6181-6185

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202825

关键词

n-type materials; doping; PbS; colloidal quantum dots; photovoltaics

资金

  1. King Abdullah University of Science and Technology (KAUST) [KUS-11-009-21]
  2. Ontario Research Fund Research Excellence Program
  3. Natural Sciences and Engineering Research Council (NSERC) of Canada
  4. NSERC CGS D Scholarship

向作者/读者索取更多资源

N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm(2) V-1 s(-1). The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 10(18) cm(-3) is varied systematically.

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