Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

ADVANCED MATERIALS

卷 24, 期 9, 页码 1171-1175

WILEY-V C H VERLAG GMBH

organic semiconductors; light emitting field effect transistor; split-gate; and injection

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. National Science Foundation [DMR 0856060, DMR 1005546]
2. NNIN network
3. Natural Science Foundation of China [51010003, 50990065, 51073058]
4. Direct For Mathematical & Physical Scien [0843934, 0856060] Funding Source: National Science Foundation
5. Division Of Materials Research [0843934, 0856060] Funding Source: National Science Foundation
6. Division Of Materials Research
7. Direct For Mathematical & Physical Scien [1005546] Funding Source: National Science Foundation