期刊
ADVANCED MATERIALS
卷 25, 期 6, 页码 872-877出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203509
关键词
reduced graphene oxide; gold nanoparticles; hybrid double floating gates; low voltage; flexible flash memory
类别
资金
- City University of Hong Kong [7002724]
- Research Grants Council of the Hong Kong Special Administrative Region [T23-713/11, AoE/P-03/08]
A hybrid double-floating-gate flexible memory device by utilizing an rGO-sheet monolayer and a Au NP array as upper and lower floating gates is reported. The rGO buffer layer acts as a charge-trapping layer and introduces an energy barrier between the Au NP lower floating gate and the channel. The proposed memory device demonstrates a strong improvement in both field-effect-transistor (FET) and memory characteristics.
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