4.8 Article

Enhanced Photocurrents of Photosystem I Films on p-Doped Silicon

期刊

ADVANCED MATERIALS
卷 24, 期 44, 页码 5959-+

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202794

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资金

  1. National Science Foundation [DMR 0907619]
  2. NSF EPSCoR [EPS 1004083]
  3. Scialog Program from the Research Corporation for Scientific Advancement
  4. Direct For Mathematical & Physical Scien
  5. Division Of Materials Research [0907619] Funding Source: National Science Foundation
  6. EPSCoR
  7. Office Of The Director [1004083] Funding Source: National Science Foundation

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Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I.

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