Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

卷 24, 期 40, 页码 5481-5486

WILEY-V C H VERLAG GMBH

phosphorus; phosphorus doping; nucleophilicity; Air stable n-type semiconducting channel; field-effect transistor

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. Creative Research Initiatives research fund of MEST/NRF
2. National Research Foundation of Korea [2006-0050684, 과C6A1804] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)