期刊
ADVANCED MATERIALS
卷 24, 期 42, 页码 5688-5694出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202361
关键词
block copolymer lithography; silicon patterning; cryo-ICP etching; high selectivity etching; nano-imprinting lithography
类别
资金
- U.S. Department of Energy BES [BES-DE-FG02-96ER45612]
- NSF supported Materials Research Science and Engineering Center
- Oxford Instruments
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05ch11231]
High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.
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