期刊
ADVANCED MATERIALS
卷 24, 期 7, 页码 951-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201103800
关键词
monolayer field-effect transistor; semiconducting polymers; layered materials; charge transport
类别
资金
- Italian MiUR [RBFR08DUX6]
- FlexTech Alliance [NDI2OD-T2]
- Office of Naval Research [N000141110328]
Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.
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